Robust GaN MMIC Chipset for T/R Module Front-End Integration
نویسندگان
چکیده
In this contribution, a set of robust GaN MMIC T/R switches and low-noise amplifiers, all based on the same GaN process, is presented. The target operating bandwidths are the X-band and the 2-18 GHz bandwidth. Several robustness tests on the fabricated MMICs demonstrate state-ofthe-art survivability to CW input power levels. The development of high-power amplifiers, robust low-noise amplifiers and T/R switches on the same GaN monolithic process will bring to the next generation of fully-integrated T/R module
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تاریخ انتشار 2014